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Development of electrically contacted GaAs-based nanowire laser diode structures on silicon

Autor
Schreitmüller, Tobias

Development of electrically contacted GaAs-based nanowire laser diode structures on silicon

Beschreibung

This thesis presents the development of GaAs(Sb)-based core-shell nanowire (NW) laser diode structures for integration on silicon photonic platforms. Key contributions include optimized vapor-solid NW growth via molecular beam epitaxy, precise doping control, and fabrication of radial n-i-p heterostructures enabling electrical injection. Comprehensive optical characterization demonstrates low-threshold lasing operation, representing a major step toward practical on-chip light sources.

Verlag
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München
ISBN/EAN
978-3-946379-68-3
Preis
18,00 EUR
Status
lieferbar