
This thesis presents the development of GaAs(Sb)-based core-shell nanowire (NW) laser diode structures for integration on silicon photonic platforms. Key contributions include optimized vapor-solid NW growth via molecular beam epitaxy, precise doping control, and fabrication of radial n-i-p heterostructures enabling electrical injection. Comprehensive optical characterization demonstrates low-threshold lasing operation, representing a major step toward practical on-chip light sources.